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Proceedings Paper

Integration of a high-Q spiral inductor into an existing digital CMOS backend
Author(s): John D. Butler; Clay Crouch
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Paper Abstract

A spiral inductor is integrated into an existing CMOS triple layer backend process. To obtain a high quality factor `Q' for the inductor the existing one micron thick metal 3 process was replaced by a three micron thick metal process. The necessary process modifications to integrate this thicker metal process are presented.

Paper Details

Date Published: 11 August 1999
PDF: 7 pages
Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); doi: 10.1117/12.360572
Show Author Affiliations
John D. Butler, Harris Semiconductor (United States)
Clay Crouch, Harris Semiconductor (United States)

Published in SPIE Proceedings Vol. 3883:
Multilevel Interconnect Technology III
Mart Graef; Divyesh N. Patel, Editor(s)

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