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Proceedings Paper

UHF2: a 0.6-um 25-GHz BiCMOS technology for mixed-signal wireless communications applications
Author(s): Don Hemmenway; Frank Baldwin; John D. Butler; Clay Crouch; Jose Delgado; Mike Jayne; Jeffrey M. Johnston; Rex Lowther; Michael Netzer; Susan Richmond; Anthony Rivoli; George Rouse; Ron Santi; Yun Yue
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Paper Abstract

A 0.6 micrometers RF BiCMOS technology was developed by the modular integration of a 25 GHz fT, 35 GHz fMAX NPN transistor and high-quality passive components into an existing 0.6 micrometers analog CMOS process. The resultant process technology supports low-cost, mixed-signal RF applications up to 2.5 GHz.

Paper Details

Date Published: 1 September 1999
PDF: 8 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360571
Show Author Affiliations
Don Hemmenway, Harris Semiconductor (United States)
Frank Baldwin, Harris Semiconductor (United States)
John D. Butler, Harris Semiconductor (United States)
Clay Crouch, Harris Semiconductor (United States)
Jose Delgado, Harris Semiconductor (United States)
Mike Jayne, Harris Semiconductor (United States)
Jeffrey M. Johnston, Harris Semiconductor (United States)
Rex Lowther, Harris Semiconductor (United States)
Michael Netzer, Harris Semiconductor (United States)
Susan Richmond, Harris Semiconductor (United States)
Anthony Rivoli, Harris Semiconductor (United States)
George Rouse, Harris Semiconductor (United States)
Ron Santi, Harris Semiconductor (United States)
Yun Yue, Harris Semiconductor (United States)


Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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