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Proceedings Paper

Characterization of tungsten silicide (WSix) film grown by chemical vapor deposition (CVD)
Author(s): Fazla Rabbi M.B. Hossain; Satheesh Ambadi; Richard Winer; Ken Kitt; Carlos Garcia; Jeff Pearse
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Paper Abstract

The objective of this work is to evaluate a well-known low resistance refractory metal silicide such as tungsten silicide (WSix) for use as a gate electrode in order to achieve faster switching speed. However, the deposition of a WSix film in high aspect ratio trenches is difficult in terms of step coverage as well as adhesion when using a low pressure chemical vapor deposition technique. The deposition canditions need to be carefully tweaked to achieve satisfactory step coverage and film thickness. This paper focuses on the deposition conditions of WSix films onto boron doped poly-Si gate material to achieve higher step coverage in the trenches.

Paper Details

Date Published: 1 September 1999
PDF: 4 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360567
Show Author Affiliations
Fazla Rabbi M.B. Hossain, Motorola (United States)
Satheesh Ambadi, Motorola (United States)
Richard Winer, Motorola (United States)
Ken Kitt, Motorola (United States)
Carlos Garcia, Motorola (United States)
Jeff Pearse, Motorola (United States)


Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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