Share Email Print

Proceedings Paper

Photoelectric characteristics of inhomogeneous MOS silicon-based structures
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The abnormal photoelectric properties of Si-MIS structures, such as a significant photo-emf signal in the state of enhancement and a drop of the local photo-emf in inversion, were investigated with integrate and local photoelectric measurements. It has been established that the reason for the significant photo-emf signal in enhancement and the related features of the photoelectric properties of the structure is the photosensitivity in the region away from the electrode associated with a nonuniform distribution of electrically active defects. It has been demonstrated that the nonuniformity in surface potential may result in a drop of the local photo-emf in inversion. A conclusion has been made that the redistribution of nonequilibrium carriers along the boundary must be taken into account in constructing equivalent circuits of actual MIS structures.

Paper Details

Date Published: 1 September 1999
PDF: 9 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360565
Show Author Affiliations
Aleksander V. Voitsekhovskii, Tomsk State Univ. (Russia) and Siberian Physico-Technical Institute (Russia)
Sergey N. Nesmelov, Tomsk State Univ. (Russia) and Siberian Physico-Technical Institute (Russia)

Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

© SPIE. Terms of Use
Back to Top