Share Email Print

Proceedings Paper

Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation
Author(s): Andrej P. Kokhanenko; Aleksander G. Korotaev; Aleksander V. Voitsekhovskii; Ivan Grushin; Mikhail S. Opekunov; Gennady E. Remnev
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

An opportunity of forming heavily doped boron layers in silicon is analyzed in this work for variation of potential barrier height on the metal-semiconductor interfaces. Implantation of boron atoms in silicon samples was made by recoil method, inducing Al ion beams bombardment with current density 4-10 A/cm2 and 30-150 keV energy. An analysis of getting structures by SIMS and calculation of their electric parameters show the opportunity of conducting layers formation with a thickness of 10 nm and carrier concentration more than 1018 cm-3.

Paper Details

Date Published: 1 September 1999
PDF: 10 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360564
Show Author Affiliations
Andrej P. Kokhanenko, Tomsk State Univ. (Russia)
Aleksander G. Korotaev, Tomsk State Univ. (Russia)
Aleksander V. Voitsekhovskii, Tomsk State Univ. (Russia)
Ivan Grushin, Tomsk Polytechnic Univ. (Russia)
Mikhail S. Opekunov, Tomsk Polytechnic Univ. (Russia)
Gennady E. Remnev, Tomsk Polytechnic Univ. (Russia)

Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

© SPIE. Terms of Use
Back to Top