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Proceedings Paper

Effect of hydrogenation on the electrophysical properties of ion-doped GaAs
Author(s): Valerii A. Kagadei; Yu V. Lilenko; Dmitrii I. Proskurovsky; L. S. Shirokova
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Paper Abstract

It has been established that hydrogenation in atomic hydrogen of ion-doped n+-n structures of semi- insulating GaAs suppresses the backgating effect. Modes of hydrogenation of structures in atomic hydrogen have been revealed which result in an increase in the rate of relaxation of photoconductivity of an n-n+-ni structures and in a moderation of the bias voltage effect on the photoconductivity. Schottky-barrier transistors and integrated circuits based on hydrogenated structure show improved electrical characteristics. The effects observed seem to be conditioned by the processes of formation and decay of complexes of hydrogen with electrically active defects in GaAs.

Paper Details

Date Published: 1 September 1999
PDF: 5 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360561
Show Author Affiliations
Valerii A. Kagadei, Research Institute of Semiconductor Devices (Russia)
Yu V. Lilenko, Research Institute of Semiconductor Devices (Russia)
Dmitrii I. Proskurovsky, Institute of High-Current Electronics (Russia)
L. S. Shirokova, Research Institute of Semiconductor Devices (Russia)


Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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