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Proceedings Paper

Effects of indium implant and post-RTA on performance and reliability of sub-100-nm retrograde channel NMOSFETs
Author(s): Qi Xiang; Bin Yu; Geffrey C. F. Yeap; Ming-Ren Lin
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Paper Abstract

In this paper, we report effects of indium implant and post- RTA on performance and reliability of Sub-100nm retrograde channel NMOSFETs. NMOSFETs with gate lengths down to 50nm were fabricated using resist trimming technique. Indium or boron implant was used for channel doping. Good device performance was obtained with indium implant and a post-RTA. Systematic investigation on effects of indium implant and post-RTA is performed. Indium channel implant was found to improve Vt roll-off, but worsen body effect. High leakage current of age oxide at STI edges with indium implant was observed and a post-RTA was found to be effective to improve this extrinsic gate oxide reliability. Effective mobility improvement with indium channel doping and further improvement with a post-RTA were also observed. An indium- induced oxide thinning was revealed and a post-RTA was found to enhance the thinning effect. Hot carrier stress tests show that indium doped retrograde channel improves hot carrier degradation and a post-RTA furthers this improvement.

Paper Details

Date Published: 1 September 1999
PDF: 9 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360552
Show Author Affiliations
Qi Xiang, Advanced Micro Devices, Inc. (United States)
Bin Yu, Advanced Micro Devices, Inc. (United States)
Geffrey C. F. Yeap, Motorola (United States)
Ming-Ren Lin, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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