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Proceedings Paper

Integration challenges at 0.15-μm technology node
Author(s): Farhad Moghadam
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Paper Abstract

The latest National Technology Roadmap for Semiconductors (NTRS) shows the most aggressive trend in IC performance advancements to date. However, the NTRS projects a course that is two to three years ahead of current industry capabilities. This discrepancy is due to the unprecedented number of new materials being introduced - transmissions that typically require five to ten years of R and D and significant modifications to IC manufacturing environments. CLearly, the challenges presented by these accelerated material changes could greatly impact product quality and reliability. This paper addresses integration complexity and capacitance issues, plus the new algorithms, design techniques, and system and chip architectures needed to meet the technology milestones dictated by the NTRS. A fundamental understanding of the new materials and processes, combined with high-productivity tools, such as the Producer mainframe, will be required to enable optimized front and back end processing.

Paper Details

Date Published: 1 September 1999
PDF: 7 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360550
Show Author Affiliations
Farhad Moghadam, Applied Materials Inc. (United States)


Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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