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Proceedings Paper

CVD Si1-xGex epitaxial growth and its applications to MOS devices
Author(s): Junichi Murota; Masao Sakuraba; Takashi Matsuura
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Paper Abstract

By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high quality Si1-xGex epitaxial growth on Si(100) is achieved. In order to prevent island growth and generation of misfit dislocations in the heterostructure, relatively low deposition temperatures and optimization of the layer thickness are inevitable for the high Ge fractions. Atomically flat surfaces and interfaces for the Si/Si1-xGex/Si heterostructures containing Si0.8Ge0.2, Si0.5Ge0.5 and Si0.3Ge0.7 layers are obtained by deposition at 550, 500 and 450 degrees C, respectively. It is also found that the Si0.5Ge0.5-channel pMOSFET has the highest peak field- effect mobility. The deposition rate, the Ge fraction and the in-situ doping characteristics with the B2H6 and PH3 addition are expressed based on the modified Langmuir-type adsorption and reaction scheme, assuming that the reactant gas adsorption/reaction depends on the surface materials. Ultrasmall MOSFETs have been also realized by selective epitaxy of impurity-doped Si1-xGex on the source/drain regions.

Paper Details

Date Published: 1 September 1999
PDF: 13 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360548
Show Author Affiliations
Junichi Murota, Tohoku Univ. (Japan)
Masao Sakuraba, Tohoku Univ. (Japan)
Takashi Matsuura, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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