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Proceedings Paper

Influence of laser annealing conditions on the performance of 0.6-um polysilicon TFTs
Author(s): Mitsuru Chida; Katsuyuki Suga; Yasuyoshi Mishima; Nobuo Sasaki
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Paper Abstract

We have investigated the influence of ambient and laser energy density on the characteristics of excimer laser crystallized poly-Si films and TFT performance. It was found that poly-Si films crystallized in air showed higher peak position of Raman spectra and larger grain size than those crystallized in vacuum. Excimer laser annealing (ELA) in vacuum made the surface roughness of poly-Si films smaller than that in air. These results show that oxygen plays an important role in grain growth. The investigation of TFT performance with gate length of 0.6 micrometers that is comparable to the grain size of ELA poly-Si films showed that intragrain defects as well as grain size influence the TFT performance.

Paper Details

Date Published: 1 September 1999
PDF: 8 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360547
Show Author Affiliations
Mitsuru Chida, Fujitsu Labs. Ltd. (Japan)
Katsuyuki Suga, Fujitsu Labs. Ltd. (Japan)
Yasuyoshi Mishima, Fujitsu Labs. Ltd. (Japan)
Nobuo Sasaki, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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