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Proceedings Paper

Effects of high-density plasma processing on MOSFET matching, noise, and hot carrier reliability
Author(s): Sidhartha Sen; Edward B. Harris; Richard W. Gregor; Samuel Martin; Mahjoub A. Abdelgadir; Rafael N. Barba; Sundar Chetlur; K. Steiner
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Paper Abstract

Experiments comparing High-Density Plasma (HDP) CVD oxide for gap-fill with a PECVD oxide/plasma etch process show effects on hot carrier reliability, transistor matching, and transistor 1/f noise. We present results from wafers processed in a 0.35 micrometers CMOS technology with three levels of metal. The results indicate that the HDP process used for gap-fill significantly improves matching and noise characteristics of metal covered devices. Both n and p channel current mirrors show improved matching between metal an no metal coverage with the HDP process. The presence of a HDP oxide film in IMD stack can reduce the mean threshold voltage difference between metal and no metal covered n- MOSFETs from 45 mV to about 4 mV. Likewise, the total integrated noise over the frequency range of 10 Hz-100 kHz of metal covered n-MOSFET is improved by a factor of 1.25 by the HDP gap-fill process. However, the HDP process has resulted in significant degradation of the d.c. hot carrier reliability of n-MOSFETs. These effects may be explained by the large amounts of hydrogen incorporated in the back-end dielectric with the HDP process.

Paper Details

Date Published: 1 September 1999
PDF: 9 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360541
Show Author Affiliations
Sidhartha Sen, Lucent Technologies/Bell Labs. (United States)
Edward B. Harris, Lucent Technologies/Bell Labs. (United States)
Richard W. Gregor, Lucent Technologies/Bell Labs. (United States)
Samuel Martin, Bell Labs. (United States)
Mahjoub A. Abdelgadir, Lucent Technologies/Bell Labs. (United States)
Rafael N. Barba, Lucent Technologies/Bell Labs. (United States)
Sundar Chetlur, Lucent Technologies/Bell Labs. (United States)
K. Steiner, Lucent Technologies/Bell Labs. (United States)

Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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