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Proceedings Paper

High-K gate dielectrics
Author(s): Wen-Jie Qi; Byoung Hun Lee; Renee Nieh; LaeGu Kang; YongJoo Jeon; Katsu Onishi; Jack C. Lee
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Paper Abstract

High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrO2 or HfO2 thin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics. Equivalent oxide thickness as thin as 9 angstrom with leakage current of about 10-2 A/cm2 was achieved. This is the lowest EOT value ever reported for ZrO2 and HfO2 thin films. Low charge- trapping, high breakdown field, and negligible stress- induced leakage currents have also been obtained.

Paper Details

Date Published: 1 September 1999
PDF: 9 pages
Proc. SPIE 3881, Microelectronic Device Technology III, (1 September 1999); doi: 10.1117/12.360537
Show Author Affiliations
Wen-Jie Qi, Univ. of Texas at Austin (China)
Byoung Hun Lee, Univ. of Texas at Austin (United States)
Renee Nieh, Univ. of Texas at Austin (United States)
LaeGu Kang, Univ. of Texas at Austin (United States)
YongJoo Jeon, Univ. of Texas at Austin (United States)
Katsu Onishi, Univ. of Texas at Austin (United States)
Jack C. Lee, Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 3881:
Microelectronic Device Technology III
David Burnett; Toshiaki Tsuchiya, Editor(s)

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