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Proceedings Paper

Characterization of glass on electronics in MEMS
Author(s): Shefali Patel; Drew Delaney; DaXue Xu; Gene Murphy; Heidi L. Denton; Henry G. Hughes
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Paper Abstract

Microelectromechanical systems (MEMS) have been around for many years. However, reliability issues, increasing costs, and die sizes are pushing the technology beyond its current capabilities. Integrating a micromachined sensor with its control circuitry on a single piece of silicon offers a cost and a performance advantage over the conventional two chip sensor. The enhancements offered by an integrated MEMS device are leading to many new challenges. The ability to encapsulate the MEMS device without affecting the integrated circuit is a key concern. One method of hermetically sealing the MEMS uses a frit glass which can cause potential damage to the integrated circuit because of the sealing parameters used. In standard CMOS processing, the integrated circuit is not subjected to high temperatures once the devices are built, whereas in wafer level packaging, high temperatures are involved. The high temperatures and the glass composition associated with the sensor capping process could be detrimental to these devices. A test vehicle was developed, therefore, to evaluate the compatibility of the CMOS and the sensor capping processes. The electrical results suggest that the glass and bonding process do not degrade the transistor performance.

Paper Details

Date Published: 3 September 1999
PDF: 6 pages
Proc. SPIE 3875, Materials and Device Characterization in Micromachining II, (3 September 1999); doi: 10.1117/12.360481
Show Author Affiliations
Shefali Patel, Motorola (United States)
Drew Delaney, Motorola (United States)
DaXue Xu, Motorola (United States)
Gene Murphy, Motorola (United States)
Heidi L. Denton, Motorola (United States)
Henry G. Hughes, Motorola (United States)

Published in SPIE Proceedings Vol. 3875:
Materials and Device Characterization in Micromachining II
Yuli Vladimirsky; Craig R. Friedrich, Editor(s)

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