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Proceedings Paper

Microfabrication of single-crystal silicon multiple torsional oscillators
Author(s): Michelle Diane Chabot; John T. Markert
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Paper Abstract

Micro-oscillators of different designs and dimensions have been fabricated for use in a nuclear magnetic resonance force microscope. The various designs include double and triple torsional oscillators which have high Q's at room temperature (approximately equals 10,000) when operating at the upper cantilever and upper torsional resonances. Depending on design and dimensions, the resonance frequencies vary from tens to hundreds of kHz. Typical dimensions of the designs are (200 X 150) micrometers 2 X 200 nm thick. To fabricate these devices, microelectric fabrication techniques were employed. Si (100) wafers were patterned, etched, and boron-implanted at a dose of 4.2 X 1016 cm-2 and an energy of 134 keV. A post-implant anneal was then performed at 1000 degree(s)C, followed by a KOH wet-etch which leaves the free-standing boron-doped oscillators. Depending on the doping level, anneal, and etch parameters, the thickness of the oscillators varies from 100 - 400 nm. In order to optimize the design and fabrication process, resonance frequencies and Q's have been characterized using fiber-optic interferometry. For example, the upper cantilever resonance of one design has been found to have a minimum detectable force of 1.5 X 10-16 N/(root)Hz at room temperature.

Paper Details

Date Published: 3 September 1999
PDF: 9 pages
Proc. SPIE 3875, Materials and Device Characterization in Micromachining II, (3 September 1999); doi: 10.1117/12.360460
Show Author Affiliations
Michelle Diane Chabot, Univ. of Texas at Austin (United States)
John T. Markert, Univ. of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 3875:
Materials and Device Characterization in Micromachining II
Yuli Vladimirsky; Craig R. Friedrich, Editor(s)

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