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Proceedings Paper

Mask manufacturability issues for subwavelength lithography
Author(s): Linard Karklin; Kenneth E. Rachlin
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Paper Abstract

As feature sizes approaches the resolution limit of optics (K1 factors less than 0.5) image quality rapidly degrades. The benefits of stepper reduction are reduced and unavoidable mask errors are amplified on silicon. This phenomenon is known as Mask Error Enhancement Factor (MEEF). MEEF puts severe constraints on the mask manufacturing process. Optical Proximity Correction (OPC) for sub-150 nm designs becomes a problem. Use of strong (alternating) phase shifting masks (PSM), however, greatly reduces Mask Error Factor (MEF) and inverts MEEF into Mask Error Attenuation Factor (MEAF). Application of strong PSM enables OPC for the next IC generation.

Paper Details

Date Published: 25 August 1999
PDF: 4 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360256
Show Author Affiliations
Linard Karklin, Numerical Technologies, Inc. (United States)
Kenneth E. Rachlin, Numerical Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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