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Proceedings Paper

Evaluation of NLD mask dry etching system
Author(s): Tatsuya Fujisawa; Takayuki Iwamatsu; Koji Hiruta; Hiroaki Morimoto; Takaei Sasaki; Kazuhide Yamashiro
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Paper Abstract

An advanced photomask dry etching system (NLDE-9035 Prototype) has been evaluated. This system adopts new plasma source NLDE, and has a 230 mm mask capability. In this experiment, etching uniformity, selectivity and etching pattern profile were mainly evaluated. Etching uniformity of 20 nm (range) was obtained and good pattern fidelity was confirmed.

Paper Details

Date Published: 25 August 1999
PDF: 6 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360255
Show Author Affiliations
Tatsuya Fujisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takayuki Iwamatsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Hiruta, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takaei Sasaki, ULVAC Coating Corp. (Japan)
Kazuhide Yamashiro, HOYA Corp. (Japan)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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