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Proceedings Paper

Impact of mask CD error on wafer CD error at low-k1 photolithography
Author(s): Byung Guk Kim; Seong-Woon Choi; Ji-Hyun Choi; Chan-Uk Chun; Hee-Sun Yoon; Jung-Min Sohn
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Paper Abstract

With the reduction of feature size, until probably 0.13 micrometer generations, it is going to be patterned using a DUV illumination source at 248 nm. In these conditions, device development and manufacturing are occurring at ever decreasing k1 factor [k1 equals CD(NA/(lambda) )]. In this low-k1 region, degradation of image contrast brings about nonlinear amplification of mask CD error during image transferring on wafer. This phenomenon (ER; Error Ratio) is severely occurred when critical dimension is smaller than 0.5((lambda) /NA). In this paper, we investigated this phenomena with various condition such as critical dimension, density of L/S, mask type, and phase shift mask. Error ratio at defocused condition is also investigated. From this viewpoint, we discussed effect of mask CD error on wafer CD error and presented newly revised CD control criteria in each device generation. In addition, several strategy which should be considered for reducing error ratio and a photomask process technology for making next generation photomask satisfying high resolution and good CD control requirements has been described in view of low k1 lithography era.

Paper Details

Date Published: 25 August 1999
PDF: 7 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360250
Show Author Affiliations
Byung Guk Kim, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Ji-Hyun Choi, Samsung Electronics Co., Ltd. (South Korea)
Chan-Uk Chun, Samsung Electronics Co., Ltd. (South Korea)
Hee-Sun Yoon, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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