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Proceedings Paper

Reduction of fogging effect caused by scattered electrons in an electron beam system
Author(s): Naoharu Shimomura; Munehiro Ogasawara; Jun Takamatsu; Shusuke Yoshitake; Kenji Ooki; Noriaki Nakayamada; Fumiyuki Okabe; Toru Tojo
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Paper Abstract

Background exposure of a resist caused by scattered electrons (the fogging effect) degrades critical dimension accuracy when the pattern density changes over the specimen. We measured the fogging effect in an electron beam optical column. In order to reduce the fogging effect, a scattered electron absorber plate having a converging holes structure was attached to the lower surface of the objective lens. When the most severe pattern for the fogging effect was applied, we achieved the size variation caused by the fogging effect less than 8 nm. The converging holes effectively trap the scattered electrons and greatly reduce the fogging effect.

Paper Details

Date Published: 25 August 1999
PDF: 8 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360242
Show Author Affiliations
Naoharu Shimomura, Toshiba Corp. (Japan)
Munehiro Ogasawara, Toshiba Corp. (Japan)
Jun Takamatsu, Toshiba Corp. (Japan)
Shusuke Yoshitake, Toshiba Corp. (Japan)
Kenji Ooki, Toshiba Corp. (Japan)
Noriaki Nakayamada, Toshiba Corp. (Japan)
Fumiyuki Okabe, Toshiba Machine Co., Ltd. (Japan)
Toru Tojo, Toshiba Machine Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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