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Proceedings Paper

Implementation of chemically amplified resist on mask technology below 0.6-um feature using high-acceleration voltage e-beam system
Author(s): Il-Ho Lee; Kyung-Han Nam; Kyeong-Mee Yeon; Keuntaek Park; Sang-Sool Koo; Youngmo Koo; Ki-Ho Baik
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Paper Abstract

We have investigated the performances of positive Chemically Amplified Resist (CAR) with High Acceleration Voltage System on mask fabrication, widely. As we had expected, the resolution and pattern fidelity both after development and after etching were improved dramatically, because of its high contrast and good dry etching durability. As a result, practical resolution limitation was 0.2 micrometer and CD linearity for 0.2 micrometer to approximately 1.0 micrometer pattern range was 0.034 micrometer with Proximity Effect Correction (PEC). We obtained CD uniformity of 31 to approximately 55 nm, to 120 X 120 mm2 area.

Paper Details

Date Published: 25 August 1999
PDF: 9 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360240
Show Author Affiliations
Il-Ho Lee, DuPont Photomasks Korea Ltd. (South Korea)
Kyung-Han Nam, DuPont Photomasks Korea Ltd. (South Korea)
Kyeong-Mee Yeon, DuPont Photomasks Korea Ltd. (South Korea)
Keuntaek Park, DuPont Photomasks Korea Ltd. (South Korea)
Sang-Sool Koo, Hyundai Electronics Industries Co., Ltd. (South Korea)
Youngmo Koo, Hyundai Electronics Industries Co., Ltd. (United States)
Ki-Ho Baik, Hyundai Electronics Industries Co., Ltd. (United States)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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