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Proceedings Paper

Design considerations for an electron-beam pattern generator for the 130-nm generation of masks
Author(s): Frank E. Abboud; Sergey V. Babin; Varoujan Chakarian; Abe Ghanbari; Robert Innes; Frederick Raymond; Allan L. Sagle; Charles A. Sauer
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Paper Abstract

The critical dimension (CD) requirements of the SIA roadmap require continued improvements in pattern generation (PG) tool technology. This includes electron-beam (e-beam) delivery, resist and process, writing strategy, and overall system throughput. In this paper, we discuss these interrelated topics and evaluate their impacts on the CD control, linearity, and uniformity performance of PG tools. By means of Monte Carlo simulations and experimental comparisons, we evaluate various parameters of e-beam delivery systems, including beam energy, spot size, writing strategy, and throughput. We also perform a thorough evaluation of mask heating effects due to e-beam exposure. Finally, we perform comparative studies of various resist and process combinations. The totality of our investigations allows us to conclude that a 50 kV raster scan e-beam system, using a high- contrast, high-sensitivity resist, such as SPR 700, with GHOST proximity effect correction (PEC), can meet the CD control, linearity, and uniformity requirements of the 130 nm technology node.

Paper Details

Date Published: 25 August 1999
PDF: 15 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360239
Show Author Affiliations
Frank E. Abboud, Etec Systems, Inc. (United States)
Sergey V. Babin, Etec Systems, Inc. (United States)
Varoujan Chakarian, Etec Systems, Inc. (United States)
Abe Ghanbari, Etec Systems, Inc. (United States)
Robert Innes, Etec Systems, Inc. (United States)
Frederick Raymond, Etec Systems, Inc. (United States)
Allan L. Sagle, Etec Systems, Inc. (United States)
Charles A. Sauer, Etec Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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