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Proceedings Paper

Advancements in focused ion beam repair of MoSiON phase-shifting masks
Author(s): Joshua Lessing; David C. Ferranti; Ganesh Sundaram; Ludwig Nagal; Martin Verbeek
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Paper Abstract

As advanced photolithography moves the printable feature size from 0.25 micrometer to 0.18 micrometer various mask types are being used to improve resolution. One example is the attenuated phase shift MoSiON mask. This in turn requires the development of new mask repair techniques that provide acceptable levels of transmission and minimize phase error. In this study we present the results of opaque defect repairs on MoSiON DUV masks, utilizing a new focused ion beam (FIB) process. Opaque defects were repaired by scanning the defect area with a gallium ion beam in the presence of an etchant gas. Dose enhancement on the order of 20x was achieved, relative non-gas enhanced sputtering on the MoSiON absorber material to a non gas enhanced gas enhanced sputtering, resulting in repaired regions with excellent transmission properties, and minimal quartz damage (riverbed). The optimization of the FIB repair process is discussed and the results of post repair characterization, utilizing AIMS and AFM are presented.

Paper Details

Date Published: 25 August 1999
PDF: 14 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360232
Show Author Affiliations
Joshua Lessing, Micrion Corp. (United States)
David C. Ferranti, Micrion Corp. (United States)
Ganesh Sundaram, Micrion Corp. (United States)
Ludwig Nagal, Siemens AG (Germany)
Martin Verbeek, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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