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Proceedings Paper

Printability of programmed x-ray mask defects
Author(s): Hiroshi Watanabe; H. Yabe; Yukiko Kikuchi; K. Marumoto; Yasuji Matsui
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Paper Abstract

In order to specify the sensitivity of the next generation inspection system, we investigated the printability of x-ray mask defects by using the simulator (Toolset) developed by University of Wisconsin. The defect size replicated in the resist was simulated for various exposure conditions such as exposure gap, mask contrast, and beam blur. The critical dimension (CD) errors due to mask defects were also calculated for the mask defect size, opaque and clear defects, and the mask pattern configuration. Based on these results, the critical size for 100 nm feature line-and-space (L&S) patterns was discussed and the sensitivity of defect inspection system for 100 nm feature L&S patterns is estimated to be at most 40 nm as the critical defect sizes inducing 10 nm CD error.

Paper Details

Date Published: 25 August 1999
PDF: 7 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360226
Show Author Affiliations
Hiroshi Watanabe, Association of Super-Advanced Electronics Technologies (Japan)
H. Yabe, Association of Super-Advanced Electronics Technologies (Japan)
Yukiko Kikuchi, Association of Super-Advanced Electronics Technologies (Japan)
K. Marumoto, Association of Super-Advanced Electronics Technologies (Japan)
Yasuji Matsui, Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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