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Proceedings Paper

Properties of sputtered TaGe as an x-ray absorber material
Author(s): Takuya Yoshihara; S. Kotsuji; Katsumi Suzuki
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Paper Abstract

Various Ta-based amorphous alloys are used as x-ray absorber materials due to their good stress controllability and stability. TaGe and TaReGe are especially suitable because of their high x-ray absorption coefficient. However, While TaGe films are more easily patterned by dry-etching than TaReGe films, their stress is more difficult to control. To improve the stress control in TaGe films, we investigated the stress under various deposition conditions. We found we could control the stress of TaGe to an adequate compressive stress with high repeatability by adjusting the DC power and working gas pressure. The stress characteristics of Ta9Ge and Ta4Ge were similar, but the stress uniformity of Ta4Ge was better than that of Ta9Ge by about 5 MPa. We could easily reduce the stress by annealing, which simultaneously improved the stress uniformity.

Paper Details

Date Published: 25 August 1999
PDF: 7 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360225
Show Author Affiliations
Takuya Yoshihara, NEC Corp. (Japan)
S. Kotsuji, NEC Corp. (Japan)
Katsumi Suzuki, NEC Corp. (Japan)

Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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