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Proceedings Paper

X-ray phase-shift mask for proximity x-ray lithography with synchrotron radiation
Author(s): Mizunori Ezaki; Ken-ichi Murooka
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Paper Abstract

In proximity X-ray lithography at the feasible gap size of approximately 10 micrometer, using attenuated phase-shift masks is the most effective method of achieving high resolution pattern transfer at the feature size of sub-100 nm. In this study, we have investigated the absorption and the phase-shift controllability of X-ray masks with various absorber materials by simulation and found that the phase- shift mask structure with Cu absorber is one of the best choices for proximity X-ray lithography using synchrotron radiation.

Paper Details

Date Published: 25 August 1999
PDF: 10 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360224
Show Author Affiliations
Mizunori Ezaki, Toshiba Corp. (Japan)
Ken-ichi Murooka, Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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