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Proceedings Paper

Evaluation of an advanced mask-writing system
Author(s): Shinji Kubo; Koji Hiruta; Masao Sugiyama; Takayuki Iwamatsu; Tatsuya Fujisawa; Hiroaki Morimoto
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Paper Abstract

For the next generation reticle fabrication, one of the key technologies is a high accelerating voltage EB writing system in combination with CAR (Chemically Amplified Resist) process. So we have evaluated an advanced electron beam mask-writing system (EBM-210VS/Toshiba Machine, Ltd) using EP002 resist (Tokyo Ohka, Ltd) and RE514OP (Hitachi Chemical, Ltd). The system adopts accelerating voltage of 50 kV, variable shaped beam, vector scanning, continuous moving stage and 230 mm mask capability. In the results of the exposure evaluations, using 4 pass writing strategy, global positioning accuracy of 23 nm (3 (sigma) ), local positioning accuracy of 16 nm (3 (sigma) ), global CD accuracy of 11 nm (3 (sigma) ), local CD accuracy of 14.5 nm (3 (sigma) ), L/S CD linearity of 23 nm and stitching accuracy of 20 nm were obtained. These results are satisfactory for our first target.

Paper Details

Date Published: 25 August 1999
PDF: 10 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360221
Show Author Affiliations
Shinji Kubo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Koji Hiruta, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masao Sugiyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takayuki Iwamatsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tatsuya Fujisawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroaki Morimoto, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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