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Proceedings Paper

Cost-effective DUV PSM process
Author(s): San-De Tzu; Ching Siun Chiu; Chue-San Yoo; Jia-Jing Wang
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Paper Abstract

A novel manufacturable and cost-effective DUV PSM process is developed and implemented in .18 micrometer and .15 micrometer PSM technology. Our novel process requires one resist coating and E-Beam exposure, hence lower cost and mis-alignment-free in chromium layer and shifter layer can be realized. The details of E-Beam lithographic process and core process are further discussed in this paper. The CD proximity is around 13 nm (the duty ratio of contact arrays is from 1:1 to 1:5) and linearity results are in 30 nm (contact size is from 0.8 micrometer to 1.2 micrometer on mask). Besides, the mechanisms of the defect sources are identified and defect counts are under controllable.

Paper Details

Date Published: 25 August 1999
PDF: 5 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360217
Show Author Affiliations
San-De Tzu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Ching Siun Chiu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chue-San Yoo, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jia-Jing Wang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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