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Proceedings Paper

Development of Cr-based attenuated phase-shift mask process for 0.18-um device generation
Author(s): Ichiro Kagami; Kiichi Ishikawa; Daichi Kakuta; Hiroichi Kawahira
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Paper Abstract

Making attenuated phase shift masks for KrF excimer laser lithography is going to be on the mass production stage for the 0.18 micrometer critical hole and line layers. Here, key issues are phase controllability, critical dimension (CD) control on the mask and mask defect repair technique. To get a sufficient mask CD controllability, we use a chemically amplified negative EB resist with a 10 kV electron beam system. For a better phase mean to target control, we have applied Chrome-based attenuated phase shift blanks. The phase angle adjusted using post process of quartz etching after pattern defect inspection. To guarantee the CD error of repaired patterns on wafer, preliminary investigation of printability with repaired mask patterns is presented.

Paper Details

Date Published: 25 August 1999
PDF: 10 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360215
Show Author Affiliations
Ichiro Kagami, Sony Corp. (Japan)
Kiichi Ishikawa, Sony Corp. (Japan)
Daichi Kakuta, Sony Corp. (Japan)
Hiroichi Kawahira, Sony Corp. (Japan)

Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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