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Proceedings Paper

Attenuated phase-shifting mask in ArF lithography
Author(s): Junji Miyazaki; Masaya Uematsu; Keisuke Nakazawa; Takahiro Matsuo; Toshio Onodera; Tohru Ogawa
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Paper Abstract

It was demonstrated that the DOF obtained using the Att-PSM was 0.5 micrometer for 150 nm hole pattern, whereas that obtained using a binary mask was 0.2 micrometer. Durability of the film subjected to ArF laser irradiation is also investigated, and no significant change is observed in both phase and transmittance. It was indicated that the attenuated phase-shifting mask (Att-PSM) is effective and realistic in ArF lithography. Factors in CD control such as mask error factor (MEF), phase and transmittance are discussed. It is important to reduce MEF for hole pattern, since MEF in experiment was over 3 while it is desired to be less than 1.8. Att-PSM with higher transmittance and higher NA are effective to reduce MEF. On the other hand, MEF for line pattern is small enough for use in production. The control of phase and transmittance are also an important issue. It is estimated that phase error of 3 deg and transmittance error of 0.3% are required.

Paper Details

Date Published: 25 August 1999
PDF: 8 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360213
Show Author Affiliations
Junji Miyazaki, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masaya Uematsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Keisuke Nakazawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Takahiro Matsuo, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshio Onodera, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tohru Ogawa, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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