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Proceedings Paper

ICP (inductively coupled plasma) dry etch of DUV MoSi HTPSM
Author(s): Kyu-Yong Lee; Lee-Ju Kim; Kyung-Han Nam; Keuntaek Park; Y. M. Ku; S. S. Ku; I. B. Hur
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Paper Abstract

Attenuated phase shift mask (PSM) have gained wide acceptance in the manufacturing environment during last few years with the advantage of improving DOF margin. However, etching attenuated phase shift film remains a challengeable process that affects several critical mask parameters including critical dimension, side slope and surface damage. In order to select the proper gas mixture condition, we will discuss the results of several experiments, utilizing CHF3 gas mixture, CF4/He/O2 gas mixture and SF6/He gas mixture chemistries. This paper reports the results of etching MoSi attenuated phase shifting materials using an inductively coupled plasma (ICP) system. Qz surface damage and trench for contact pattern is also reviewed as well as performance among those different gas mixture.

Paper Details

Date Published: 25 August 1999
PDF: 8 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360204
Show Author Affiliations
Kyu-Yong Lee, DuPont Photomasks Korea Ltd. (South Korea)
Lee-Ju Kim, DuPont Photomasks Korea Ltd. (South Korea)
Kyung-Han Nam, DuPont Photomasks Korea Ltd. (South Korea)
Keuntaek Park, DuPont Photomasks Korea Ltd. (South Korea)
Y. M. Ku, Hyundai Electronics (South Korea)
S. S. Ku, Hyundai Electronics (South Korea)
I. B. Hur, Hyundai Electronics (South Korea)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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