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Proceedings Paper

Fine pattern process with negative tone resist: II
Author(s): Eiichi Hoshino; Toshikatsu Minagawa; Akira Morishige; Keiji Watanabe
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Paper Abstract

In polystyrene-based polymer resist process for photomask fabrication, a characteristics of its dissolution process has been investigated. The quality of the resist patterns strongly depended on polydispersivity of molecular weight in the polymer. (1) To explore this effect, the volume size of polymer, which was swelling in the developer, was determined by using the dynamic light scattering method. (2) It was found that the volume size did not only depend on the molecular weight of polymer but also the composition of developer. In this paper, the improvement of development process suited for photomask fabrication with polystyrene-based polymer is reported.

Paper Details

Date Published: 25 August 1999
PDF: 4 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360202
Show Author Affiliations
Eiichi Hoshino, Fujitsu Ltd. (Japan)
Toshikatsu Minagawa, Fujitsu Ltd. (Japan)
Akira Morishige, Fujitsu Ltd. (Japan)
Keiji Watanabe, Fujitsu Labs. Ltd. (Japan)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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