Share Email Print

Proceedings Paper

Advanced high-resolution mask processes using optical proximity correction
Author(s): Y. David Chan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The benefits of incorporating some 'distortion' to the design data in order to produce the desired results on the wafers has been recognized for many years. This 'distortion' has come to be commonly referred to as optical proximity correction (OPC) by the lithography community. In today's era of high throughput laser reticle writing tools, line shortening and corner rounding has forced OPC up the lithography tree from wafer imaging to reticle imaging. With the increasing popularity of 4X systems, the comparatively large spot laser reticle writing systems in the field today need to be extended before being rendered useless for critical reticle requirements due to reticle corner rounding, line shortening and scatter bar resolution. These problems must be resolved in order to extend the use of laser tool for technology node below 0.25 micrometer. Some previous work has been done in adding corner serifs to eliminate corner rounding in contact holes. It was clear from the results that the optimal serifs sizes could be different when patterns were written on different tools. However, there is no clear understanding how the process may affect the outcome. A recent paper by W. Ziegler, et al shows the effect of adding small serifs to line ends on line end shortening based on aerial image and wafer measurement. This paper will discuss the effect of Laser Proximity correction (LPC) and the reticle manufacturing processes on pattern fidelity. CAPROX LPCTM is used to correct for distoritons during the mask exposure. Not only will the impact of lithographic tools on OPC be discussed, but an examination of the effect of wet and dry etched processes on corner rounding, image fidelity, and line end shortening will also be presented.

Paper Details

Date Published: 25 August 1999
PDF: 8 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360199
Show Author Affiliations
Y. David Chan, Photronics, Inc. (United States)

Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

© SPIE. Terms of Use
Back to Top