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Proceedings Paper

Interactive OPC simulator for memory devices
Author(s): Hirotomo Inui; Haruo Iwasaki; Toshiyuki Ohta; Hiroyoshi Tanabe
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Paper Abstract

The practical OPC simulation system suitable for memory devices is developed with a simple threshold model considering acid diffusion in chemically amplified resists. And the resist parameter extraction method is also presented. The simulation performance is within 0.01 micrometer CD error, and within a few second computation time for 4 micrometer2 area memory cell on a EWS.

Paper Details

Date Published: 25 August 1999
PDF: 8 pages
Proc. SPIE 3748, Photomask and X-Ray Mask Technology VI, (25 August 1999); doi: 10.1117/12.360195
Show Author Affiliations
Hirotomo Inui, NEC Corp. (Japan)
Haruo Iwasaki, NEC Corp. (Japan)
Toshiyuki Ohta, NEC Corp. (Japan)
Hiroyoshi Tanabe, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 3748:
Photomask and X-Ray Mask Technology VI
Hiroaki Morimoto, Editor(s)

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