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Proceedings Paper

Stress in dielectric thin films: evolution with annealing and ion implantation
Author(s): Christine Mahodaux; Herve Rigneault; Laurent Gallais; Alexandre Gatto; Paul Moretti
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Paper Abstract

Stress in dense thin films deposited by Reactive Low-Voltage Ion Plating or by Ion Assisted Deposition is investigated in air and at room temperature. Ion implantation, at high energy, proves to be a way to vary and diminish the stress in thin films. Stress changes with annealing show the possibility to reducing not only stress but also optical absorption.

Paper Details

Date Published: 7 September 1999
PDF: 11 pages
Proc. SPIE 3738, Advances in Optical Interference Coatings, (7 September 1999); doi: 10.1117/12.360075
Show Author Affiliations
Christine Mahodaux, Ecole Nationale Superieure de Physique de Marseille (France)
Herve Rigneault, Ecole Nationale Superieure de Physique de Marseille (France)
Laurent Gallais, Ecole Nationale Superieure de Physique de Marseille (France)
Alexandre Gatto, Ecole Nationale Superieure de Physique de Marseille (Germany)
Paul Moretti, Univ. Lyon I--Claude Bernard (France)


Published in SPIE Proceedings Vol. 3738:
Advances in Optical Interference Coatings
Claude Amra; H. Angus Macleod, Editor(s)

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