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Proceedings Paper

Super-high-power operation of 0.98-um InGaAs(P)/InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers
Author(s): Dmitri Z. Garbuzov; Mikhail A. Maiorov; V. Khalfin; Maria G. Harvey; A. Al-Muhanna; Luke J. Mawst; Dan Botez; John C. Connolly
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Paper Details

Date Published: 6 August 1999
PDF: 8 pages
Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); doi: 10.1117/12.356942
Show Author Affiliations
Dmitri Z. Garbuzov, Sarnoff Corp. (United States)
Mikhail A. Maiorov, Sensors Unlimited, Inc. (United States)
V. Khalfin, Sarnoff Corp. (United States)
Maria G. Harvey, Sarnoff Corp. (United States)
A. Al-Muhanna, Univ. of Wisconsin/Madison (United States)
Luke J. Mawst, Univ. of Wisconsin/Madison (United States)
Dan Botez, Univ. of Wisconsin/Madison (United States)
John C. Connolly, Sarnoff Corp. (United States)

Published in SPIE Proceedings Vol. 3625:
Physics and Simulation of Optoelectronic Devices VII
Peter Blood; Akira Ishibashi; Marek Osinski, Editor(s)

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