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Proceedings Paper

High-injection behavior of InGaAs quantum well
Author(s): Petr Georgievich Eliseev; Irina V. Akimova
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Paper Details

Date Published: 6 August 1999
PDF: 12 pages
Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); doi: 10.1117/12.356933
Show Author Affiliations
Petr Georgievich Eliseev, Univ. of New Mexico and P.N. Lebedev Physical Institute (United States)
Irina V. Akimova, P. N. Lebedev Physical Institute (Russia)


Published in SPIE Proceedings Vol. 3625:
Physics and Simulation of Optoelectronic Devices VII
Peter Blood; Akira Ishibashi; Marek Osinski, Editor(s)

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