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Proceedings Paper

Role of p-doping profile in InGaAsP multiquantum well lasers: comparison of simulation and experiment
Author(s): Mark S. Hybertsen; Muhammad A. Alam; Gleb E. Shtengel; Gregory L. Belenky; C. Lewis Reynolds; Dmitri V. Donetsky; R. Kent Smith; Gene A. Baraff; Rudolf F. Kazarinov; James D. Wynn; L. E. Smith
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Paper Details

Date Published: 6 August 1999
PDF: 11 pages
Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); doi: 10.1117/12.356912
Show Author Affiliations
Mark S. Hybertsen, Lucent Technologies/Bell Labs. (United States)
Muhammad A. Alam, Lucent Technologies/Bell Labs. (United States)
Gleb E. Shtengel, Lucent Technologies/Bell Labs. (United States)
Gregory L. Belenky, SUNY/Stony Brook (United States)
C. Lewis Reynolds, Lucent Technologies/Bell Labs. (United States)
Dmitri V. Donetsky, SUNY/Stony Brook (United States)
R. Kent Smith, Lucent Technologies/Bell Labs. (United States)
Gene A. Baraff, Lucent Technologies/Bell Labs. (United States)
Rudolf F. Kazarinov, Lucent Technologies/Bell Labs. (United States)
James D. Wynn, Lucent Technologies/Bell Labs. (United States)
L. E. Smith, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3625:
Physics and Simulation of Optoelectronic Devices VII
Peter Blood; Akira Ishibashi; Marek Osinski, Editor(s)

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