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Proceedings Paper

Characterization of InGaN/AlGaN multiple-quantum-well laser diodes
Author(s): Michael Kneissl; David P. Bour; Linda T. Romano; Daniel Hofstetter; Matt D. McCluskey; Clarence John Dunnrowicz; Mark Teepe; Rose M. Wood; Noble M. Johnson
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Paper Details

Date Published: 6 August 1999
PDF: 7 pages
Proc. SPIE 3625, Physics and Simulation of Optoelectronic Devices VII, (6 August 1999); doi: 10.1117/12.356863
Show Author Affiliations
Michael Kneissl, Xerox Palo Alto Research Ctr. (United States)
David P. Bour, Xerox Palo Alto Research Ctr. (United States)
Linda T. Romano, Xerox Palo Alto Research Ctr. (United States)
Daniel Hofstetter, Xerox Palo Alto Research Ctr. (Switzerland)
Matt D. McCluskey, Xerox Palo Alto Research Ctr. (United States)
Clarence John Dunnrowicz, Xerox Palo Alto Research Ctr. (United States)
Mark Teepe, Xerox Palo Alto Research Ctr. (United States)
Rose M. Wood, Xerox Palo Alto Research Ctr. (United States)
Noble M. Johnson, Xerox Palo Alto Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3625:
Physics and Simulation of Optoelectronic Devices VII
Peter Blood; Akira Ishibashi; Marek Osinski, Editor(s)

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