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Proceedings Paper

Local study of a double hetero-junction laser diode by apertureless scanning near-field optical microscopy
Author(s): Gregory Wurtz; Renaud Bachelot; Pascal Royer
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Paper Abstract

We studied locally a double hetero-junction GaAs/GaAlAs laser diode by apertureless Scanning Near-field Optical Microscopy. The optical probe used is a tungsten tip vibrating (at frequency f) perpendicularly to the emitting surface. Suitable experimental parameters permitting us to accede to near-field information have been defined. Their respective importance in the extraction of near-field information is shown and discussed.

Paper Details

Date Published: 19 July 1999
PDF: 2 pages
Proc. SPIE 3749, 18th Congress of the International Commission for Optics, (19 July 1999); doi: 10.1117/12.354850
Show Author Affiliations
Gregory Wurtz, Univ. de Technologie de Troyes (France)
Renaud Bachelot, Univ. de Technologie de Troyes (France)
Pascal Royer, Univ. de Technologie de Troyes (France)


Published in SPIE Proceedings Vol. 3749:
18th Congress of the International Commission for Optics

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