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Proceedings Paper

InGaN-based LEDs and laser diodes
Author(s): Shuji Nakamura
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Paper Abstract

A violet InGaN multi-quantum well/GaN/AlGaN separate- confinement-heterostructure laser diode (LD) was grown on epitaxially laterally overgrown GaN on sapphire. The threshold current density was 2 - 4 kA/cm2. The LDs with cleaved mirror facets showed an output power as high as 30 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode in the near-field patterns was observed at an output power up to 30 mW. The lifetime of the LDs at a constant output power of 5 mW was more than 1,900 hours under CW operation at an ambient temperature of 50 degree(s)C.

Paper Details

Date Published: 19 July 1999
PDF: 2 pages
Proc. SPIE 3749, 18th Congress of the International Commission for Optics, (19 July 1999); doi: 10.1117/12.354827
Show Author Affiliations
Shuji Nakamura, Nichia Chemical Industries, Ltd. (United States)


Published in SPIE Proceedings Vol. 3749:
18th Congress of the International Commission for Optics
Alexander J. Glass; Joseph W. Goodman; Milton Chang; Arthur H. Guenther; Toshimitsu Asakura, Editor(s)

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