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Proceedings Paper

Modeling low-frequency fluctuations in semiconductor lasers with lateral carrier diffusion
Author(s): M. S. Torre; Cristina Masoller; Neal Broadus Abraham
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Paper Abstract

Low frequency fluctuations similar to those observed in experiments are found in a model that includes explicitly carrier diffusion and lateral profiles for the carriers and the optical field. We compare with the predictions of the standard model, that includes lateral effects phenomenologically though an additional gain saturation term.

Paper Details

Date Published: 19 July 1999
PDF: 2 pages
Proc. SPIE 3749, 18th Congress of the International Commission for Optics, (19 July 1999); doi: 10.1117/12.354756
Show Author Affiliations
M. S. Torre, Univ. Nacional del Ctr. de la Provincia de Buenos Aires (Argentina)
Cristina Masoller, Univ. de la Republica and Bryn Mawr College (Uruguay)
Neal Broadus Abraham, Bryn Mawr College and DePauw Univ. (United States)

Published in SPIE Proceedings Vol. 3749:
18th Congress of the International Commission for Optics
Alexander J. Glass; Joseph W. Goodman; Milton Chang; Arthur H. Guenther; Toshimitsu Asakura, Editor(s)

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