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Proceedings Paper

Direct emissivity measurements of IR materials
Author(s): Yanina Kisler; Lenn C. Kupferberg; Gordon Mackenzie; Chia Ming Chen
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Paper Abstract

Emissivity measurements of ZnS, Sapphire, ALON, MgO, and Yttria were performed in 3.9-4.0 micrometers and 4.4-4.9 micrometers bands, for temperatures between 300 degrees C and 600 degrees C. The average radiance was measured over each waveband. Emissivity was calculated as the ratio of the radiance of the sample to that of a black body source at the same temperature. The results of the emissivity measurements for the above-mentioned materials will be reported. Measurement techniques that allowed increasing the dynamic range of the measurement and significantly reducing the noise will be discussed.

Paper Details

Date Published: 26 July 1999
PDF: 8 pages
Proc. SPIE 3705, Window and Dome Technologies and Materials VI, (26 July 1999); doi: 10.1117/12.354636
Show Author Affiliations
Yanina Kisler, Raytheon Systems Co. (United States)
Lenn C. Kupferberg, Raytheon Systems Co. (United States)
Gordon Mackenzie, Raytheon Systems Co. (United States)
Chia Ming Chen, Raytheon Systems Co. (United States)


Published in SPIE Proceedings Vol. 3705:
Window and Dome Technologies and Materials VI
Randal W. Tustison, Editor(s)

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