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Proceedings Paper

Readout device processing electronics for IR linear and focal plane arrays
Author(s): Fiodor F. Sizov; Yurii P. Derkach; Yu. G. Kononenko; Vladimir P. Reva
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Paper Abstract

Silicon read-out devices with input direct injection and buffered direct injection circuits and charge coupled devices (CCD) multiplexers to be used with n+-p- or p+-n-photovoltaic (PV) multielement arrays were designed, manufactured and tested in T equals 77-300 K temperature temperature region. Into these read-out devices were incorporated the testing switches which attach the sources of direct injection transistors to the common load resistors to imitate the output signal of mercury cadmium telluride photodiodes. The silicon read-out devices for 2 X 64 n+-p- or p(superscript +n- linear arrays and n(superscript +-p-2 X 4 X 128 time delay and integration arrays with skimming and partitioning functions were manufactured by n- or p-channel MOS technology with buried channel CCD register. The designed CCD readout devices are driven with four- or two-phase clock pulses.

Paper Details

Date Published: 26 July 1999
PDF: 10 pages
Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354581
Show Author Affiliations
Fiodor F. Sizov, Institute of Semiconductor Physics (Ukraine)
Yurii P. Derkach, Institute of Microdevices (Ukraine)
Yu. G. Kononenko, Institute of Microdevices (Ukraine)
Vladimir P. Reva, Institute of Microdevices (Ukraine)


Published in SPIE Proceedings Vol. 3698:
Infrared Technology and Applications XXV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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