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Proceedings Paper

Infrared FPA readout circuit based on current mirroring integration
Author(s): Haluk Kulah; Tayfun Akin
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Paper Abstract

This paper reports an improved Current Mirroring Integration (CMI) unit cell and a new readout structure based on it. The new structure combines the benefits of the current mirroring direct injection and switch current integration structures, satisfying the requirements for the high resolution and high performance IR FPA readouts. The improved CMI readout circuit provides very high injection efficiency, almost-zero detector bias, and large dynamic range, while it can be implemented in a small pixel area. the circuit provides a maximum charge storage capacity of 5.25 X 107 electrons and a maximum transimpedence of 6 X 107 (Omega) for a 5V power supply and a 2pF integration capacitance, which is paled outside the unit cell. The unit cell employs only nine MOS transistors and occupies an area of 20micrometers X 25 micrometers in a 0.8 micrometers CMOS process.

Paper Details

Date Published: 26 July 1999
PDF: 11 pages
Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354578
Show Author Affiliations
Haluk Kulah, Middle East Technical Univ. (United States)
Tayfun Akin, Middle East Technical Univ. (Turkey)

Published in SPIE Proceedings Vol. 3698:
Infrared Technology and Applications XXV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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