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Proceedings Paper

GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers
Author(s): Osamu Abe; Hiroshi Murakami; Yoshihiko Okamura; Moriaki Wakaki; Taisuke Yakawa; Masayasu Koyama; Tsutomu Ogawa
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Paper Abstract

The submillimeter wavelength region is the last undeveloped spectral window in astronomy. The poor transmission of the atmosphere, and the lack of high-performance detectors prevent astronomical observations in this window. We have recently started a development of photoconductors utilizing shallow donor levels in GaAs semiconductors. The GaAs photoconductor promises to be a good candidate of a photo detector for use in future space mission for submillimeter astronomy. We have constructed facilities for liquid-phase epitaxy to obtain ultra-pure GaAs crystals which were absolutely necessary for a fabrication of photoconductors. The first experimental results are reported.

Paper Details

Date Published: 26 July 1999
PDF: 9 pages
Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354563
Show Author Affiliations
Osamu Abe, Jasco Opto Co., Ltd. (Japan)
Hiroshi Murakami, Institute of Space and Astronautical Science (Japan)
Yoshihiko Okamura, Institute of Space and Astronautical Science (Japan)
Moriaki Wakaki, Tokai Univ. (Japan)
Taisuke Yakawa, Tokai Univ. (Japan)
Masayasu Koyama, Tokai Univ. (Japan)
Tsutomu Ogawa, Institute for Applied Optics (Japan)

Published in SPIE Proceedings Vol. 3698:
Infrared Technology and Applications XXV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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