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Proceedings Paper

512x512-element GeSi/Si heterojunction infrared FPA
Author(s): Hideo Wada; Mitsuhiro Nagashima; Kenkichi Hayashi; Junji Nakanishi; Masafumi Kimata; Norimasa Kumada; Sho Ito
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Paper Abstract

We have developed a monolithic 512 X 512 element GeSi/Si heterojunction IR focal plane array (FPA). The operation mechanism of the GeSi/Si heterojunction detector is the same as that of the PtSi/Si Schottky-barrier detector. We have fabricated the GeSi/Si heterojunction using MBE technology, and have confirmed that ideal strained GeSi films are grown on Si substrate. We have evaluated the dependencies of spectral responsivity on the Ge composition, impurity concentration and GeSi thickness, and have optimized them for 8-12 micrometers IR detection. The 512 X 512 element FPA has a pixel size of 34 X 34 micrometers 2 and a fill factor of 59 percent. A low noise equivalent temperature difference of 0.08 K was obtained with a 300 K background with a very small responsivity dispersion of 2.2 percent.

Paper Details

Date Published: 26 July 1999
PDF: 12 pages
Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354561
Show Author Affiliations
Hideo Wada, Japan Defense Agency (Japan)
Mitsuhiro Nagashima, Japan Defense Agency (Japan)
Kenkichi Hayashi, Japan Defense Agency (Japan)
Junji Nakanishi, Mitsubishi Electric Corp. (Japan)
Masafumi Kimata, Mitsubishi Electric Corp. (Japan)
Norimasa Kumada, Mitsubishi Electric Corp. (Japan)
Sho Ito, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 3698:
Infrared Technology and Applications XXV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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