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Proceedings Paper

Amorphous-silicon-based uncooled microbolometer IRFPA
Author(s): Corrinne Vedel; Jean-Luc Martin; Jean-Louis Ouvrier-Buffet; Jean-Luc Tissot; Michel Vilain; Jean-Jacques Yon
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Paper Abstract

LETI LIR has been involved in Amorphous Silicon uncooled microbolometer development for a few years. This paper reports recent progress that have been carried out both in technological and product field. Due to the very particular features of LETI LIR technology, large fill factor, high thermal insulation, associated with small thermal time constant, can be achieved, resulting in a large detector responsivity. In addition, pulsed bias has been introduced showing performance improvement in terms of power consumption, reliability, faster thermal response. A model has been developed which accounts for these improvements. Electro-thermal results obtained from an IRCMOS 256 X 64, 47 micrometers detector sizes, laboratory prototype show that NETD less than 50 mK at f/1 can be obtained even at a high video scanning rate, that is compatible with micro scanning techniques.

Paper Details

Date Published: 26 July 1999
PDF: 8 pages
Proc. SPIE 3698, Infrared Technology and Applications XXV, (26 July 1999); doi: 10.1117/12.354529
Show Author Affiliations
Corrinne Vedel, CEA-LETI (France)
Jean-Luc Martin, CEA-LETI (France)
Jean-Louis Ouvrier-Buffet, CEA-LETI (France)
Jean-Luc Tissot, CEA-LETI (France)
Michel Vilain, CEA-LETI (France)
Jean-Jacques Yon, CEA-LETI (France)


Published in SPIE Proceedings Vol. 3698:
Infrared Technology and Applications XXV
Bjorn F. Andresen; Marija Strojnik, Editor(s)

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