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Proceedings Paper

Antireflection strategies for sub-0.18-um dual-damascene structure patterning in KrF 248-nm lithography
Author(s): Shuo-Yen Chou; Chien-Ming Wang; Chin Chiu Hsia; Li-Jui Chen; Gue-Wuu Hwang; Shyh-Dar Lee; Jen-Chung Lou
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Paper Abstract

Finding high performance and low cost anti-reflection strategies is a common goal for all photolithographers. This task is getting tough for dual damascene process than the metal-etch process because the oxide thickness variation enhances the thin film interference effect. In this paper, different ARC strategies using organic and inorganic material were examined to compare their CD control performance in sub-0.81micrometers dual damascene structure for KrF 248nm lithography. The organic bottom ARC (BARC) achieves reflectivity control through modulation its thickness. The first and second minimal points in BARC swing curve were chosen as the film thickness to be evaluated. The inorganic ARC, which referred to dielectric ARC (DARC) using PECVD silicon oxynitride in this article, was investigated with single layer and double layers structures. The double- layer DARC structure consists of two layers with different extinction coefficient K values. The optimal refractive index and thickness of each ARC structure were calculated from some available photolithography simulators. A PECVD process for DARC growth that provides easily tunable range of refractive index and thickness was established to meet the DUV process requirement from simulation. The performances of each ARC structure were evaluated on patterning 0.18 micrometers trench and 0.20 micrometers via in back-end- of-line dual damascene process. It showed that the double- layer DARC provided the most effective CD control ability among these ARC structures. The double-layer DARC should be one of the most potential candidates for sub-0.18 micrometers dual damascene process.

Paper Details

Date Published: 26 July 1999
PDF: 9 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354410
Show Author Affiliations
Shuo-Yen Chou, National Chiao Tung Univ. (Taiwan)
Chien-Ming Wang, Industrial Technology Research Institute (Taiwan)
Chin Chiu Hsia, Industrial Technology Research Institute (Taiwan)
Li-Jui Chen, Industrial Technology Research Institute (Taiwan)
Gue-Wuu Hwang, Industrial Technology Research Institute (Taiwan)
Shyh-Dar Lee, Industrial Technology Research Institute (Taiwan)
Jen-Chung Lou, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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