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Proceedings Paper

Intrawafer CD control in state-of-the-art lithography
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Paper Abstract

In this work, die-to-die CD-variations across a wafer are investigated as a potential important contribution to the global gate CD-control. Measuring the non-uniformity in different experiments using CD-SEM and ELM revealed different parameters, impacting the measured non-uniformity value. It will be pointed out that the measurement itself can have a significant contribution to the measured 3(sigma) -value, especially using CD-SEM, if the level in non-uniformity is low. Further on, it will be shown that the choice of resist and developer chemistry can have a high impact on the i-W CD non-uniformity. Moreover, the potential impact of exposure and track processing will be outlined, and an optimization methodology will be presented. Finally, it will be shown that gate process integration, in particular BARC- and POLY-etching, is increasing the i-W CD non-uniformity. This is affecting the ELM-results, despite the high precision and repeatability of these measurements. This ELM-variation, as well as the overall i-W CD non- uniformity should be taken into account when using ELM or CD-SEM as a metrology tool for process window characterization.

Paper Details

Date Published: 26 July 1999
PDF: 11 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354406
Show Author Affiliations
Ivan K.A. Pollentier, IMEC (Belgium)
Christiaan Baert, IMEC (Belgium)
Thomas Marschner, IMEC (Germany)
Kurt G. Ronse, IMEC (Belgium)
Grozdan Grozev, Arch Chemicals (Belgium)
Mario Reybrouck, Arch Chemicals (Belgium)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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