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Proceedings Paper

Challenge to 0.13-um device patterning using KrF
Author(s): Insung Kim; Junghyun Lee; DongHo Cha; Joonsoo Park; Hanku Cho; Joo-Tae Moon
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Paper Abstract

The extension of optical lithography to sub-0.18micrometers design rule using high NA KrF lithographic tool and resolution enhancement technique (RET) is strongly required because of the delayed ArF lithography technology. The theoretical limits, i.e., the diffraction limits of KrF lithography show that 0.1(Mu) m is in the unreachable region with current exposing tool of 0.6NA and even with high NA KrF scanners which will be available soon. Therefore 0.13micrometers device with 0.26micrometers pitch will be a real challenge to most lithographers. In this paper we discuss the status of 0.13micrometers device and show some of the critical device patterns exposed with several KrF scanners which are currently available. Many problems can easily be predicted and must be overcome. The challenge, however, seems to be surmountable in the near future.

Paper Details

Date Published: 26 July 1999
PDF: 10 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354405
Show Author Affiliations
Insung Kim, Samsung Electronics Co., Ltd. (South Korea)
Junghyun Lee, Samsung Electronics Co., Ltd. (South Korea)
DongHo Cha, Samsung Electronics Co., Ltd. (South Korea)
Joonsoo Park, Samsung Electronics Co., Ltd. (South Korea)
Hanku Cho, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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