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Proceedings Paper

Optimization criteria for SRAM design: lithography contribution
Author(s): Daniel C. Cole; Orest Bula; Edward W. Conrad; Daniel S. Coops; William C. Leipold; Randy W. Mann; Jeffrey H. Oppold
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Paper Abstract

Here we discuss the use of well calibrated resist and etch bias models, in conjunction with a fast microlithography aerial image simulator, to predict and 'optimize' the printed shapes through all critical levels in a dense SRAM design. Our key emphasis here is on 'optimization criteria', namely, having achieved good predictability for printability with lithography models, how to use this capability in conjunction of best electrical performance, yield, and density. The key lithography/design optimization issues discussed here are: (1) tightening of gate width variation by reducing spatial curvature in the source and drain regions, (2) achieving sufficient contact areas, (3) maximizing process window for overlay, (4) reducing leakage mechanisms by reducing contributions of stress and strain due to the printed shape of oxide isolation regions, (5) examining topological differences in design during the optimization process, (6) accounting for mask corner rounding, and (7) designing for scalability to smaller dimensions to achieve optical design reusability issues without hardware.

Paper Details

Date Published: 26 July 1999
PDF: 13 pages
Proc. SPIE 3679, Optical Microlithography XII, (26 July 1999); doi: 10.1117/12.354404
Show Author Affiliations
Daniel C. Cole, Boston Univ. (United States)
Orest Bula, IBM Microelectronics Div. (United States)
Edward W. Conrad, IBM Microelectronics Div. (United States)
Daniel S. Coops, IBM Microelectronics Div. (United States)
William C. Leipold, IBM Microelectronics Div. (United States)
Randy W. Mann, IBM Microelectronics Div. (United States)
Jeffrey H. Oppold, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3679:
Optical Microlithography XII
Luc Van den Hove, Editor(s)

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